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DAN202 Datasheet(PDF) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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DAN202 Datasheet(HTML) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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1 / 2 page ![]() High speed. High reliability. Suitable for hig packing density layout. Ultra high speed switching Silicon epitaxial planar Type No. Marking Package Code DAN202 N SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage VRM 80 V DC Reverse Voltage VR 80 V Forward continuous Current(Single) IFM 300 mA Forward continuous Current(Double) IFM 450 mA Average rectified forward current(Single) IO 100 mA Average rectified forward current(Double) IO 150 mA Non-repetitive forward Surge Current @t=1.0us(Single) @t=1.0us(Double) Isurge 4 6 A Power Dissipation Pd 200 mW Thermal resistance,junction to ambient air RθJA 357 ℃/W Junction temperature Tj 150 ℃ Storage temperature range Tstg -55 -+150 ℃ DAN202 Dual Surface Mount Fast Switching Diode Features Applications Ordering Information Dimensions in inches and (millimeters) SOT-23 ht t p : // www.lgesemi.com mail:lge@lgesemi.com Revision:201 70701-P1 |
Número de pieza similar - DAN202_V01 |
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Descripción similar - DAN202_V01 |
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