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AM652X Datasheet(PDF) 136 Page - Texas Instruments |
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AM652X Datasheet(HTML) 136 Page - Texas Instruments |
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136 / 277 page ![]() 136 AM6548, AM6528, AM6546 AM6526, AM6527 SPRSP08I – NOVEMBER 2017 – REVISED DECEMBER 2019 www.ti.com Submit Documentation Feedback Product Folder Links: AM6548 AM6528 AM6546 AM6526 AM6527 Specifications Copyright © 2017–2019, Texas Instruments Incorporated Table 5-13. LVCMOS-FS Buffers DC Electrical Characteristics (continued) over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IIN Input leakage current. This value represents the maximum current flowing in or out of the pin while the output driver is disabled and the input is swept from VSS to VDD. VI = VDDSHV0 45 µA VI = VSS 1 µA IOZ Total leakage current through the driver/receiver combination, which may include an internal pull-up or pull-down. This value represents the maximum current flowing in or out of the pin while the output driver is disabled, the pull-up or pull-down is inhibited, and the input is swept from VSS to VDD. 45 µA (1) Voltage Input High Steady State (VIHSS) should be maintained when the signal is not transitioning. (2) Voltage Input Low Steady State (VILSS) should be maintained when the signal is not transitioning. 5.6.1 USBHS Buffers DC Electrical Characteristics NOTE USB0 and USB1 Electrical Characteristics are compliant with Universal Serial Bus Revision 2.0 Specification dated April 27, 2000 including ECNs and Errata as applicable. 5.6.2 SERDES Buffers DC Electrical Characteristics NOTE The PCIe interfaces are compliant with the electrical parameters specified in PCI Express® Base Specification Revision 3.1. NOTE USB0 instance is compliant with the USB3.1 SuperSpeed Transmitter and Receiver Normative Electrical Parameters as defined in the Universal Serial Bus 3.1 Specification, Revision 1.0, July 26, 2013. |
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