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T1635H-8T Datasheet(PDF) 3 Page - STMicroelectronics |
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T1635H-8T Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 11 page ![]() Table 3. Static characteristics Symbol Test conditions Tj Value Unit VTM (1) ITM = 22 A, tp = 380 µs 25 °C Max. 1.50 V VTO (1) Threshold voltage 150 °C Max. 0.80 V RD(1) Dynamic resistance 150 °C Max. 23 mΩ IDRM/IRRM VD = VR = VDRM = VRRM 25 °C Max. 2.0 µA 150°C 5.5 mA VD = VR = 400 V, peak voltage 150 °C Max. 2.3 mA 1. For both polarities of A2 referenced to A1. Table 4. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) Max. 1.1 °C/W Rth(j-a) Junction to ambient Typ. 60 °C/W T1635H-8T Characteristics DS13214 - Rev 1 page 3/11 |
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