DN3135 datasheet(2/12 Pages) MICROCHIP

2 / 12 page

DN3135

DS20005703A-page 2

 2017 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

Drain-to-source Voltage........................................................................................................................................ BVDSX

Drain-to-gate Voltage ........................................................................................................................................... BVDGX

Gate-to-source Voltage ........................................................................................................................................... ±20V

Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C

Storage Temperature, TS...................................................................................................................... –55°C to +150°C

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

DC ELECTRICAL CHARACTERISTICS 1

Electrical Specifications: Unless otherwise specified, for all specifications TA =TJ = +25°C.

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

Drain-to-source Breakdown

Voltage

BVDSX

350

—

VGS = –5V, ID = 100 µA

Gate-to-source Off Voltage

VGS(OFF)

–1.5

—

–3.5

VDS = 15V, ID = 10 µA

Change in VGS(OFF) with

Temperature

∆VGS(OFF)

—

–4.5

mV/°C VDS = 15V, ID = 10 µA (Note 2)

Gate Body Leakage Current

IGSS

—

100

VGS = ±20V, VDS = 0V

Drain-to-source Leakage Current

ID(OFF)

—

µA

VDS = Max rating, VGS = –5V

—

VDS = 0.8 Max Rating,

VGS = –5V, TA = 125°C (Note 2)

Saturated Drain-to-source Current

IDSS

180

—

VGS = 0V, VDS = 15V

Static Drain-to-source On-state



Resistance

RDS(ON)

—

Ω

VGS = 0V, ID = 150 mA

Change in RDS(ON) with

Temperature

∆RDS(ON)

—

1.1

%/°C

VGS = 0V, ID = 150 mA (Note 2)

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty

cycle.

2: Specification is obtained by characterization and is not 100% tested.

DN3135 Datasheet(PDF) 2 Page - Microchip Technology

DN3135 Datasheet(HTML) 2 Page - Microchip Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Descarga

Enlace URL