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OPA607 Datasheet(PDF) 5 Page - Texas Instruments

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No. de pieza OPA607
Descripción Electrónicos  OPA810 140-MHz, Rail-to-Rail Input/Output, FET-Input Operational Amplifier
PDF  50 Pages
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI1 - Texas Instruments

OPA607 Datasheet(HTML) 5 Page - Texas Instruments

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OPA810
www.ti.com
SBOS799A – AUGUST 2019 – REVISED DECEMBER 2019
Product Folder Links: OPA810
Submit Documentation Feedback
Copyright © 2019, Texas Instruments Incorporated
(1)
For AC specifications, G = 2 V/V, RF = 1 kΩ and CL = 4.7 pF (unless otherwise noted).
(2)
Test levels (all values set by characterization and simulation): (A) 100% tested at 25°C, overtemperature limits by characterization and
simulation; (B) Not tested in production, limits set by characterization and simulation; (C) Typical value only for information.
(3)
Lower of the measured positive and negative slew rate.
(4)
Change in input offset from its value when input is biased to midsupply.
7.5 Electrical Characteristics: 10 V
Test conditions unless otherwise noted: TA = 25°C, VS+ = 5 V, VS– = –5 V, common-mode voltage (VCM) = mid-supply, RL = 1
kΩ connected to mid-supply
(1).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TEST
LEVEL(2)
AC PERFORMANCE
SSBW
Small-signal bandwidth
G = 1, VO = 20 mVPP, RF = 0 Ω
135
MHz
C
G = 1, VO = 20 mVPP, RF = 0 Ω,
CL = 10 pF
140
C
G = –1, VO = 20 mVPP
68
C
LSBW
Large-signal bandwidth
G = 2, VO = 2 VPP
41
MHz
C
GBWP
Gain-bandwidth product
70
MHz
C
Bandwdith for 0.1-dB
flatness
G = 2, VO = 20 mVPP
16
MHz
C
SR
Slew rate (20%-80%)(3)
G = 2, VO = –2-V to 2-V step
200
V/µs
C
Rise time
VO = 200-mV step
4
ns
C
Fall time
VO = 200-mV step
4
ns
C
Settling time to 0.1%
G = 2, VO = 2-V step
47
ns
C
G = 2, VO = 8-V step
65
C
Settling time to 0.001%
G = 2, VO = 2-V step
330
ns
C
G = 2, VO = 8-V step
230
C
Input overdrive recovery
G = 1, RF = 0 Ω, (VS– – 0.5 V) to (VS+
+ 0.5 V) input
55
ns
C
Output overdrive recovery
G = –1, (VS– – 0.5 V) to (VS+ + 0.5 V)
input
55
ns
C
HD2
Second-order harmonic
distortion
f = 100 kHz, RL = 1 kΩ, VO = 2 VPP
–120
dBc
C
f = 1 MHz, RL = 1 kΩ, VO = 2 VPP
–101
C
HD3
Third-order harmonic
distortion
f = 100 kHz, RL = 1 kΩ, VO = 2 VPP
–137
dBc
C
f = 1 MHz, RL = 1 kΩ, VO = 2 VPP
–101
C
en
Input-referred voltage noise
f = 500 kHz, flatband
6.3
nV/
√Hz
C
in
Input-referred current noise
f = 10 kHz
5
fA/
√Hz
C
zO
Closed-loop output
impedance
f = 100 kHz
0.007
Ω
C
DC PERFORMANCE
AOL
Open-loop voltage gain
f = DC, VO = ±2.5 V
108
120
dB
A
VOS
Input offset voltage
100
500
µV
A
Input offset voltage drift
TA = –40°C to +125°C
2.5
10
µV/°C
B
Input bias current
2
20
pA
A
Input offset current
1
20
pA
A
CMRR
Common-mode rejection
ratio
f = DC, VCM = –3 V to 1 V
80
100
dB
A
TA = –40°C to +125°C
80
B
INPUT
Allowable input differential
voltage
See Figure 54
±7
V
C
Common-mode input
impedance
In closed-loop configuration
12 || 2
GΩ||pF
C
Differential input capacitance
In open-loop configuration
0.5
pF
C
Most positive input voltage
ΔVOS < 5 mV
(4)
VS+ + 0.2
VS+ + 0.3
V
A



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