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PJM3018NSA Datasheet(PDF) 3 Page - Dongguan Pingjingsemi Technology Co., Ltd,

No. de pieza PJM3018NSA
Descripción Electrónicos  N- Enhancement Mode Field Effect Transistor
PDF  6 Pages
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Fabricante Electrónico  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Página de inicio  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM3018NSA Datasheet(HTML) 3 Page - Dongguan Pingjingsemi Technology Co., Ltd,

  PJM3018NSA Datasheet HTML 1Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3018NSA Datasheet HTML 2Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3018NSA Datasheet HTML 3Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3018NSA Datasheet HTML 4Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3018NSA Datasheet HTML 5Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM3018NSA Datasheet HTML 6Page - Dongguan Pingjingsemi Technology Co., Ltd,  
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PJM3018NSA
N- Enhancement Mode Field Effect Transistor
www.pingjingsemi.com
Revision：1.0 Nov-2018
3 /
6
Ratings And Characteristic Curves
0
5
0.00
0.05
0.10
0.15
0.20
0
4
0.1
1
10
100
0
20
0
5
10
15
0.2
1.0
0.1
1
10
100
1
100
0
20
40
60
4.0V
T
a=25
℃
Pulsed
Output Characteristics
3.5V
V
GS=3.0V
V
GS=2.5V
V
GS=2.0V
V
GS=1.5V
1234
Drain to Source Voltage V
DS
(V)
0.3
3
30
V
DS=3V
T
a=25
℃
Pulsed
Transfer Characteristics
200
123
Gate to Source Voltage V
GS
(V)
T
a=25
℃
Pulsed
I
D=100mA
I
D=50mA
—— VGS
R
DS(ON)
5
10
15
Gate to Source Voltage V
GS
(V)
0.3
3
30
200
V
GS=0V
T
a=25
℃
Pulsed
V
SD
I
S
——
200
0.4
0.6
0.8
Source to Drain Voltage V
SD
(V)
3
T
a=25
℃
Pulsed
I
D
——
R
DS(ON)
V
GS=2.5V
V
GS=4.5V
10
30
Drain Current I
D
(mA)



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