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MMBTSC5344 Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

No. de pieza MMBTSC5344
Descripción Electrónicos  NPN Transistor
PDF  4 Pages
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Fabricante Electrónico  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Página de inicio  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

MMBTSC5344 Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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MMBTSC5344
NPN Transistor
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Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 1 V, IC = 100 mA
Current Gain Group
O
Y
HFE
100
160
-
-
200
320
Collector Base Cutoff Current
at VCB = 35 V
ICBO
-
-
100
nA
Emitter Base Cutoff Current
at VEB = 5 V
IEBO
-
-
100
nA
Emitter Base Breakdown Voltage
at IE = 10 μA
V(BR)EBO
5
-
-
V
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
VCE(sat)
-
-
0.5
V
Base Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
VBE(sat)
-
-
1.2
V
Transition Frequency at
VCE = 5 V, IC = 10 mA
fT
-
120
-
MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
Cob
-
13
-
pF
Collector Base Breakdown Voltage
at IC = 100 μA
V(BR)CBO
35
-
-
V
Collector Emitter Breakdown Voltage
at IC = 10 mA
V(BR)CEO
30
-
-
V
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Revision：1.0 Mar-2019



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