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MMBTSC2412 Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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MMBTSC2412 Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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2 / 4 page ![]() MMBTSC2412 NPN Transistor www.pingjingsemi.com 2 / 4 Revision :1.0 May-2018 Electrical Characteristics at TA= 25℃ Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 6 V, IC = 1mA Q R S hFE hFE hFE 120 180 270 - - - 270 390 560 - - - Collector Base Cutoff Current at VCB = 60 V ICBO - 100 nA Emitter Base Cutoff Current at VEB = 7 V IEBO - 100 nA Collector Base Breakdown Voltage at IC = 50 µA V(BR)CBO 60 - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 50 - V Emitter Base Breakdown Voltage at IE = 50 µA V(BR)EBO 7 - V Collector Emitter Saturation Voltage at IC = 50 mA, IB = 5 mA VCE(sat) - 0.4 V Base Emitter Saturation Voltage at IC = 50 mA, IB = 5 mA VBE(sat) - 1 V Current Gain Bandwidth Product at VCE = 12 V, IE = 2 mA, f = 100 MHz fT - 180 - MHz Collector Output Capacitance at VCE = 12 V, f = 1 MHz Cob - 3.5 pF |
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