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MMBTSC1815 Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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MMBTSC1815 Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 4 page  MMBTSC1815 NPN Transistor 1 / 4 www.pingjingsemi.com Revis ion：1.0 Oct-2017 Features For Switching and AF Amplifier Applications. As Complementary Type of the PNP Transistor MMBTSA1015 is Recommended. Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55 to 150 ℃ SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Marking: MMBTSC1815O:8O MMBTSC1815Y:8Y MMBTSC1815G:HF MMBTSC1815L:8L |
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