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MMBTA10 Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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MMBTA10 Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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2 / 3 page ![]() MMBTA10 NPN Transistor 2 / 3 Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 10 V, IC = 4 mA HFE 60 - Collector Base Cutoff Current at VCB = 25 V ICBO - 100 nA Emitter Base Cutoff Current at VEB = 2 V IEBO - 100 nA Emitter Base Breakdown Voltage at IE = 10 μA V(BR)EBO 3 - V Collector Emitter Saturation Voltage at IC = 4 mA, IB = 0.4 mA VCE(sat) - 0.5 V Base Emitter Saturation Voltage at VCE = 10 V, IC = 4 mA VBE(on) - 0.95 V Transition Frequency at VCE = 10 V, IC = 4 mA, f = 100 MHz fT 650 - MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz Cob - 0.7 pF Collector Base Breakdown Voltage at IC = 100 μA V(BR)CBO 30 - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 25 - V www.pingjingsemi.com Revision:1.0 Mar-2019 Crb 0.35 0.65 pF Collector Base Feedback Capacitance at VCB = 10 V, f = 1 MHz |
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