MMBT4401 datasheet(2/4 Pages) PJSEMI

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MMBT4401

NPN Transistor

2 / 4

Electrical Characteristics at TA = 25℃

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at VCE = 1 V, IC = 0.1 mA

at VCE = 1 V, IC = 1 mA

at VCE = 1 V, IC = 10 mA

at VCE = 1 V, IC = 150 mA

at VCE = 2 V, IC = 500 mA

hFE

100

300

Collector Base Cutoff Current

at VCB = 35 V

ICBO

0.1

µA

Emitter Base Cutoff Current

at VEB = 5 V

IEBO

0.1

µA

Collector Base Breakdown Voltage

at IC = 0.1 mA

V(BR)CBO

Collector Emitter Breakdown Voltage

at IC = 1 mA

V(BR)CEO

Emitter Base Breakdown Voltage

at IE = 0.1 mA

V(BR)EBO

Collector Emitter Saturation Voltage

at IC = 10 mA, IB = 1 mA

at IC = 50 mA, IB = 5 mA

VCE(sat)

0.4

0.75

Base Emitter Saturation Voltage

at IC = 150 mA, IB = 15 mA

at IC = 500 mA, IB = 50 mA

VBE(sat)

0.75

0.95

1.2

Current Gain Bandwidth Product

at VCE = 10 V, IC = 20 mA, f = 100 MHz

250

MHz

Collector Output Capacitance

at VCB = 5 V, f = 1 MHz

Cob

6.5

Delay Time

at VCC = 30 V, VBE = 2 V, IC = 150 mA, IB1 = 15 mA

Rise Time

at VCC = 30 V, VBE = 2 V, IC = 150 mA, IB1 = 15 mA

Storage Time

at VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA

225

Fall Time

at VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA

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Revision：1.1 Jan-2019

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