BC807-25QA datasheet(7/15 Pages) NEXPERIA

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BC807-25QA_40QA

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Product data sheet

Rev. 1 — 30 August 2013

7 of 15

Nexperia

BC807-25QA; BC807-40QA

45 V, 500 mA PNP general-purpose transistors

Characteristics

[1]

Pulse test: tp  300 s;   0.02.

Table 8.

Characteristics

Tamb = 25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base

cut-off current

VCB = 20 V; IE = 0 A

100 nA

VCB = 20 V; IE = 0 A;

Tj = 150 C

5

A

IEBO

emitter-base

cut-off current

VEB = 5 V; IC = 0 A

100 nA

hFE

DC current gain

VCE = 1 V; IC = 100 mA

[1]

BC807-25QA

160

400

BC807-40QA

250

600

hFE

DC current gain

VCE = 1 V; IC = 500 mA

[1] 40

VCEsat

collector-emitter

saturation voltage

IC = 500 mA; IB = 50 mA

[1] --

700 mV

VBE

base-emitter voltage

IC = 500 mA; VCE = 1 V

[1] --

1.2

collector capacitance

VCB = 10 V; IE = ie = 0 A;

f=1MHz

-6

-pF

transition frequency

VCE = 5 V; IC = 10 mA;

f=100MHz

--MHz

VCE = 1 V

(1) Tamb = 100 C

(2) Tamb = 25 C

(3) Tamb = 55 C

Tamb = 25 C

Fig 7.

BC807-25QA: DC current gain as a function of

collector current; typical values

Fig 8.

BC807-25QA: Collector current as a function

of collector-emitter voltage; typical values

006aaa120

400

200

600

hFE

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(2)

(3)

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