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PDTC124XMB Datasheet(PDF) 7 Page - Nexperia B.V. All rights reserved

No. de pieza PDTC124XMB
Descripción Electrónicos  NPN resistor-equipped transistor; R1 = 22 k廓, R2 = 47 k廓
PDF  12 Pages
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Fabricante Electrónico  NEXPERIA [Nexperia B.V. All rights reserved]
Página de inicio  https://www.nexperia.com/
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PDTC124XMB Datasheet(HTML) 7 Page - Nexperia B.V. All rights reserved

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PDTC124XMB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 26 June 2012
6 of 11
NXP Semiconductors
PDTC124XMB
NPN resistor-equipped transistor; R1 = 22 k
Ω, R2 = 47 kΩ
8.
Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
f = 1 MHz; Tamb = 25 °C
VCE = 5 V; Tamb = 25 °C
Fig 8.
Collector capacitance as a function of
collector-base voltage; typical values of built-in
transistor
Fig 9.
Transition frequency as a function of collector
current; typical values of built-in transistor
VCB (V)
050
40
20
30
10
006aad055
1
2
3
Cc
(pF)
0
006aac757
IC (mA)
10-1
102
10
1
102
103
fT
(MHz)
10



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