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TPC6004 Datasheet(PDF) 3 Page - Toshiba Semiconductor

No. de pieza TPC6004
Descripción Electrónicos  Notebook PC Applications Portable Equipment Applications Silicon N Channel MOS Type (U-MOSIII)
PDF  7 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC6004 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TPC6004
2004-07-06
3
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Pulse drain reverse current
(Note 1)
IDRP
24
A
Forward voltage (Diode)
VDSF
IDR = 6 A, VGS = 0 V
−1.2
V
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 3.0 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5:
• on lower left of the marking indicates Pin 1.
(a)
FR-4
25.4
× 25.4 × 0.8
Unit: (mm)
(b)
FR-4
25.4
× 25.4 × 0.8
Unit: (mm)



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