WNB111S5APTS datasheet(3/7 Pages) WEEN

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WeEn Semiconductors

WNB111S5APTS

Ultrafast power diode - Bare die

WNB111S5APTS

Product data sheet

All information provided in this document is subject to legal disclaimers.

9 October 2018

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6. Characteristics

Table 4. Characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

VF*

forward voltage

IF = 5 A; Tj = 25 °C

1.14

1.4

VF**

forward voltage

IF = 15 A; Tj = 25 °C

1.4

1.8

IF = 15 A; Tj = 150 °C

1.4

IR*

reverse current

VR = 600 V; Tj = 25 °C

μA

IR**

reverse current

VR = 600 V; Tj = 150 °C

Dynamic characteristics

trr**

reverse recovery time

IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;

Tj = 25 °C

IF = 15 A; VR = 400 V; dIF/dt = 500 A/μs;

Tj = 25 °C

IF = 15 A; VR = 200 V; dIF/dt = 200 A/μs;

Tj = 25 °C

Notes:

(1) * mean that parameter are 100% test at Tamb = 25°C

(2) ** means that the guaranteed ratings and parameter limits will depend on the assembled structure. When correctly

assembled with suitable die bonding and wire bonding, the device will have ratings and characteristics guaranteed in this

data sheet, similar to the assembled devices BYV430J-600P.

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