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RFASWB643ATF09 Datasheet(PDF) 2 Page - WALSIN TECHNOLOGY CORPORATION

No. de pieza RFASWB643ATF09
Descripción Electrónicos  Any 2G/3G/4G Band for TRx System
PDF  8 Pages
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Fabricante Electrónico  WALSIN [WALSIN TECHNOLOGY CORPORATION]
Página de inicio  http://www.passivecomponent.com/
Logo WALSIN - WALSIN TECHNOLOGY CORPORATION

RFASWB643ATF09 Datasheet(HTML) 2 Page - WALSIN TECHNOLOGY CORPORATION

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Approval Sheet
Page 2 of 8
ASC_RFASWB643ATF09_V02
Apr. 2018
FEATURES
Low Insertion Loss
：0.45dB typ. @ 2.7GHz
High Isolation
：27dB typ. @ 2.7GHz
Low control voltage
：1.3 to 2.7 V ：
Miniature footprint
：2.0 x 2.0 x 0.55 mm3
Moisture Sensitive Level 3 (MSL3)
：
High ESD tolerance of 2kV HBM at all pins
Description
The RFASWB643ATF09 is a SOI (Silicon On Insulator) double pole double throw (DPDT) switch in a low cost miniature
QFN (2.0x2.0 x0.55mm3) package. Typical applications are for SV-LTE ,LTE-A and diversity antenna switching.
The RFASWB643ATF09 is ideally suited for applications where high power, high linearity, low insertion loss, and small size
are required.
The RFASWB643ATF09 has ESD protection devices to achieve excellent ESD performances.
Application
2G/3G/4G multimode cellular handsets (LTE, UMTS, CDMA2000, EDGE, GSM, TDD-LTE, TD-SCDMA)
Block Diagram and Pin Out (Top View)
RF3
RF1
RF2
VDD
VC1
Bias
Decoder
RF4
1
2
3
4
5
6
7
8
9
10
11
12
Pin Names and Descriptions
Pin
Name
Description
Pin
Name
Description
1
VDD
DC power supply
7
RF1
RF path 1
2
N/C
No connected
8
N/C
No connected
3
VC1
Control voltage 1
9
RF4
RF path 4
4
GND
Ground
10
GND
Ground
5
RF2
RF path 2
11
path3
RF path 3
6
GND
Ground
12
GND
Ground



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