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BUS13A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUS13A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BUS13A DESCRIPTION · · High Switching Speed · High Voltage · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Converters · Inverters · Switching regulators · Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 6 A IBM Base Current-Peak 9 A PC Collector Power Dissipation @TC=25℃ 175 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃ /W |
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