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3DA608 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 3DA608
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

3DA608 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
3DA608
DESCRIPTION
·
High DC Current Gain-
: hFE: 20-180@IC= 7.5A
·
Excellent Safe Operating Area
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use as an output device in complementary
audio amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
3DA608A
40
V
3DA608B
60
3DA608C
90
3DA608D
110
3DA608E
160
3DA608F
230
VCEO
Collector-Emitter Voltage
3DA608A
30
V
3DA608B
50
3DA608C
80
3DA608D
100
3DA608E
150
3DA608F
200
VEBO
Emitter-Base Voltage
4
V
ICM
Pulsed Collector Current
10
A
PC
Collector Power Dissipation@TC=25℃
100
W
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55-175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.5
℃
/W


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