IXTP3N120 datasheet(1/4 Pages) IXYS

No. de pieza	IXTP3N120

Descripción Electrónicos	High Voltage Power MOSFETs

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Fabricante Electrónico	IXYS [IXYS Corporation]

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N-Channel Enhancement Mode

Avalanche Rated, High dv/dt

Features

l International standard packages

l Low R

DS (on)

l Rated for unclamped Inductive load

Switching (UIS)

l Molding epoxies meet UL 94 V-0

flammability classification

Advantages

l Easy to mount

l Space savings

l High power density

High Voltage

Power MOSFETs

G

S

TO-263 (IXTA)

G

D

S

TO-220 (IXTP)

G = Gate

D

= Drain

S = Source

TAB = Drain

IXTA/IXTP 3N120

IXTA/IXTP 3N110

D (TAB)

V

DSS

I

D25

R

DS(on)

1200 V

3 A

4.5

Ω

1100 V

3 A

4.0

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

3N120

1200

V

3N110

1100

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

3N120

1200

V

3N110

1100

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C3

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

12

A

I

AR

T

C

= 25

°C3

A

E

AR

T

C

= 25

°C

20

mJ

E

AS

700

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

150

W

T

J

-55 to +150

°C

T

JM

150

°C

T

stg

-55 to +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

M

d

Mounting torque (TO-220)

1.13/10

Nm/lb.in.

Weight

TO-220

4

g

TO-263

2

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

D = 1 mA

3N120

1200

V

3N110

1100

V

GS(th)

V

DS

= V

GS, ID = 250 µA

2.5

4.5

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±100

nA

I

DSS

V

DS

= 0.8 V

DSS

T

J

= 25

°C25

µA

V

GS

= 0 V

T

J

= 125

°C1

mA

R

DS(on)

V

GS

= 10 V, I

D = 0.5 ID25

3N120

4.5

Ω

Note 1

3N110

4.0

Ω

Preliminary Data Sheet

98844A (11/01)

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IXTP3N120 Datasheet(PDF) 1 Page - IXYS Corporation

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