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SSM3K72CTC Datasheet(PDF) 4 Page - Toshiba Semiconductor

No. de pieza SSM3K72CTC
Descripción Electrónicos  MOSFETs Silicon N-Channel MOS
PDF  8 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM3K72CTC Datasheet(HTML) 4 Page - Toshiba Semiconductor

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SSM3K72CTC
4
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Qg
Qgs
Qgd
Test Condition
VDD = 30 V, VGS = 4.5 V,
ID = 200 mA
Min
Typ.
0.27
0.08
0.08
Max
0.35
Unit
nC
5.5.
5.5.
5.5.
5.5. Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Diode forward voltage
(Note 1)
Symbol
VDSF
Test Condition
ID = -115 mA, VGS = 0 V
Min
Typ.
0.87
Max
-1.2
Unit
V
Note 1: Pulse measurement.
6.
6.
6.
6. Marking
Marking
Marking
Marking
7.
7.
7.
7. Equivalent Circuit
Equivalent Circuit
Equivalent Circuit
Equivalent Circuit
2017-12-04
Rev.3.0
©2015-2017
Toshiba Electronic Devices & Storage Corporation



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