FMMT449

NPN Low Saturation Transistor

These devices are designed with high current gain and low saturation voltage with collector currents up to 2A

continuous. Sourced from Process NB.

Absolute Maximum Ratings*

°C

-55 to +150

Operating and Storage Junction Temperature Range

A

1

2

Collector Current - Continuous

- Peak Pulse Current

V

5

Emitter-Base Voltage

V

50

Collector-Base Voltage

V

30

Collector-Emitter Voltage

Units

FMMT449

Parameter

Symbol

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

°C/W

250

Thermal Resistance, Junction to Ambient

mW

mW/°C

500

4

Total Device Dissipation*

Derate above 25°C

FMMT449

Units

Max

Characteristic

Symbol

*Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in

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© 1998Fairchild Semiconducto Corporation

fmmt449.lwpPrNB revA

SuperSOT

C

E

B