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74HC30 Datasheet(PDF) 1 Page - Silicon Supplies |
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74HC30 Datasheet(HTML) 1 Page - Silicon Supplies |
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1 / 5 page ![]() High Speed CMOS Logic – 74HC30 Rev 1.0 7/5/2019 8-Input NAND Gate IC in bare die form Low Input Current: 1µA Output Drive Capability: 10 LSTTL loads Outputs Directly Interface to CMOS, NMOS, & TTL Operating Voltage Range: 2V to 6V CMOS High Noise Immunity Function compatible with 74LS30. Features: Ordering Information The The following part suffixes apply: Description The 74HC30 8-Input NAND Gate is made using a 2.5µm 5V CMOS process & combines the high speed of LSTTL with CMOS low power consumption. The device performs Boolean functions in positive logic: Y = A • B • C • D • E • F • G • H or Y = A + B + C + D + E + F + G + H. Device inputs are compatible with standard CMOS outputs; with pull-up resistors, they are compatible with LSTTL outputs. Internal circuitry comprises 3 stages & includes buffered output for high noise immunity & stability. Die Dimensions in µm (mils) 1030 (40) No suffix - MIL-STD-883 /2010B Visual Inspection For High Reliability versions of this product please see 54HC30 Supply Formats: Mechanical Specification Default – Die in Waffle Pack (400 per tray capacity) Die Size (Unsawn) 1030 x 1270 40 x 50 µm mils Minimum Bond Pad Size 108 x 108 4.25 x 4.25 µm mils Die Thickness 350 (±20) 13.78 (±0.79) µm mils Top Metal Composition Al 1%Si 1.1µm Back Metal Composition N/A – Bare Si Sawn Wafer on Tape – On request Unsawn Wafer – On request Die Thickness <> 350µm(14 Mils) – On request Assembled into Ceramic Package – On request Page 1 of 5 www.siliconsupplies.com |
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