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KSE340 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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KSE340 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor KSE340 DESCRIPTION · High Collector-Emitter breakdown voltage · Low Collector Saturation Voltage · Complement to Type KSE350 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · High voltage general purpose applications · Suitable for transform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.5 A PC Collector Power Dissipation @ TC=25℃ 20 W Collector Power Dissipation @ Ta=25℃ 1.3 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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Descripción similar - KSE340 |
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