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D40C7 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza D40C7
Descripción Electrónicos  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

D40C7 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
D40C7
DESCRIPTION
·
High DC Current Gain-
: hFE = 10K-70K
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 50V(Min)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
13
V
IC
Collector Current-Continuous
0.5
A
ICM
Collector Current-Peak
1
A
PC
Collector Power Dissipation
@TC=25℃
6.25
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
20
℃
/W


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