APT2012F3C datasheet(2/4 Pages) TO-GRACE

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ELECTRICAL / OPTICAL CHARACTERISTICS at TA=25°C

APT2012F3C

ABSOLUTE MAXIMUM RATINGS at TA=25°C

Parameter

Symbol

Emitting Color

Value

Unit

Typ.

Max.

Wavelength at Peak Emission IF = 20mA

λpeak

Infrared

940

Spectral Bandwidth at 50% Φ REL MAX

IF = 20mA

Δλ

Infrared

Capacitance

Infrared

Forward Voltage IF = 20mA

[1]

Infrared

1.2

1.6

Reverse Current (VR = 5V)

Infrared

µA

Temperature Coefficient of Wavelength

IF = 20mA, -10°C ≤ T ≤ 85°C

TCλ

Infrared

0.3

nm/°C

Temperature Coefficient of VF

IF = 20mA, -10°C ≤ T ≤ 85°C

TCV

Infrared

-1.2

mV/°C

Parameter

Symbol

Unit

Power Dissipation

Reverse Voltage

Junction Temperature

115

°C

Operating Temperature

Top

-40 to +85

°C

Storage Temperature

Tstg

-40 to +85

°C

DC Forward Current

Peak Forward Current

IFM

[1]

1200

Thermal Resistance (Junction / Ambient)

Rth JA

[2]

265

°C/W

Thermal Resistance (Junction / Solder point)

Rth JS

[2]

160

°C/W

Value

Electrostatic Discharge Threshold (HBM)

8000

Notes:

1. Forward voltage: ±0.1V.

2. Wavelength value is traceable to CIE127-2007 standards.

3. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure.

Notes:

1. 1/100 Duty Cycle, 10μs Pulse Width.

2. Rth JA ,Rth JS Results from mounting on PC board FR4 (pad size ≥ 16 mm

2 per pad).

3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033.

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