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GD9FS1G8F2ALG Datasheet(PDF) 46 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD9FS1G8F2ALG Datasheet(HTML) 46 Page - GigaDevice Semiconductor (Beijing) Inc. |
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46 / 55 page ![]() GD9Fx1GxF2A 46 12.4 Performance Characteristics Parameter Symbol Min Typ. Max Unit Data transfer from cell to register tR 25 us Program Time tPROG - 300 700 μs Read Cache busy time tCBSYR 5 tR μs Cache Program short busy time tCBSYW 5 700 μs Number of Partial Program Cycles in the Same Page NOP - - 4 cycles Block Erase Time tBERS - 3 10 ms Device resetting time Read tRST 10 us Program 20 us Erase 500 us Note: Typical value is measured at Vcc=3.3V, TA=25 ℃(3.3V Device) or Vcc=1.8 V, TA=25℃(1.8V Device). |
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