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GD25B256DFIS Datasheet(PDF) 71 Page - GigaDevice Semiconductor (Beijing) Inc.

No. de pieza GD25B256DFIS
Descripción Electrónicos  3.3V Uniform Sector Dual and Quad Serial Flash
PDF  82 Pages
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Fabricante Electrónico  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Página de inicio  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25B256DFIS Datasheet(HTML) 71 Page - GigaDevice Semiconductor (Beijing) Inc.

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3.3V Uniform Sector
Dual and Quad Serial Flash
GD25B256D
71
8. ELECTRICAL CHARACTERISTICS
8.1. POWER-ON TIMING
Figure 73 Power-on Timing
Vcc(max)
Vcc(min)
VWI
tVSL
Chip Selection is not allowed
Device is fully
accessible
Time
Table 25 Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min
Max
Unit
tVSL
VCC (min) To CS# Low
2.5
ms
VWI
Write Inhibit Voltage
1.5
2.5
V
8.2. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1(each Byte contains FFH). The Status
Register bits are set to 0, except QE bit (S9) and DRV0 bit (S21) are set to 1.
8.3. ABSOLUTE MAXIMUM RATINGS
Table 26 Absolute Maximum Ratings
Parameter
Value
Unit
Ambient Operating Temperature
-40 to 85
℃
Storage Temperature
-65 to 150
℃
Applied Input/Output Voltage
-0.6 to VCC+0.4
V
Transient Input/Output Voltage (note: overshoot)
-2.0 to VCC+2.0
V
VCC
-0.6 to 4.2
V



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