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GD25B64CSIG Datasheet(PDF) 45 Page - GigaDevice Semiconductor (Beijing) Inc.

No. de pieza GD25B64CSIG
Descripción Electrónicos  3.3V Uniform Sector Dual and Quad Serial Flash
PDF  57 Pages
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Fabricante Electrónico  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Página de inicio  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25B64CSIG Datasheet(HTML) 45 Page - GigaDevice Semiconductor (Beijing) Inc.

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3.3V Uniform Sector
Dual and Quad Serial Flash
GD25B64C
45
8. ELECTRICAL CHARACTERISTICS
8.1. POWER-ON TIMING
Vcc(max)
Vcc(min)
VWI
tVSL
Chip Selection is not allowed
Device is fully
accessible
Time
Table6. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min
Max
Unit
tVSL
VCC (min) To CS# Low
1.8
ms
VWI
Write Inhibit Voltage
1.5
2.5
V
8.2. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH). The Status
Register bits are set to 0, except DRV0 bit (S21) and QE bit (S9) are set to 1.
8.3. ABSOLUTE MAXIMUM RATINGS
Table7. Absolute Maximum Ratings
Parameter
Value
Unit
Ambient Operating Temperature
-40 to 85
℃
Storage Temperature
-65 to 150
℃
Applied Input/Output Voltage
-0.6 to VCC+0.4
V
Transient Input/Output Voltage (note: overshoot)
-2.0 to VCC+2.0
V
VCC
-0.6 to 4.2
V



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