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IRF221 Datasheet(PDF) 3 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

No. de pieza IRF221
Descripción Electrónicos  N-Channel Power Mosfets
PDF  5 Pages
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Fabricante Electrónico  ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]
Página de inicio  http://www.artschip.com/
Logo ARTSCHIP - ARTSCHIP ELECTRONICS CO.,LMITED.

IRF221 Datasheet(HTML) 3 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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IRL220-223/IRF620-623
MTP7N18/7N20
N-Channel Power Mosfets
7A,150-200V
www.artschip.com
3
Electrical Characteristics
(Cont.) (TC=25℃ unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
Test Conditions
On Characteristics
2.0
4.0
VGS(th)
Gate Threshold Voltage
IRF220-223/IRF620-623
MTP7N18/20
2.0
4.5
V
ID=250µA, VDS=VGS
ID=1mA, VDS=VGS
0.8
1.2
RDS(on)
Static Drain-Source On-Resistance2
IRF220/221/620/621
IRF222/223/622/623
MPT7N18/7N20
0.7
Ω
VGS=10V, ID=2.5A
ID=3.5A
2.45
5.9
V
V
VGS=10V; ID=3.5A
VGS=10V; ID=7.0A
VDS(on)
Drain-Source On-Voltage 2
MTP7N18/7N20
5.0
V
VGS=10V, ID=3.5A
TC=100℃
gfs
Forward Transconductance
1.3
S( )
VDS=10V, ID=2.5A
Dynamic Characteristics
Ciss
Input Capacitance
600
pF
Coss
Output Capacitance
300
pF
Crss
Reverse Transfer Capacitance
80
pF
VDS=25V, VGS=0V
f=1.0MHz
Switching Characteristics
(TC=25℃, Figure 1,2)
3
td(on)
Turn-on Delay Time
40
ns
tr
Rise Time
60
ns
td(off)
Turn-Off Delay Time
100
ns
tf
Fall Time
60
ns
VDD=100V, ID=2.5A
VGS=10V, RGEN=50 Ω
RGS=50 Ω
Qg
Total Gate Charge
15
nC
VGS=10V, ID=6.0A
VDD=45V
Symbol
Characteristic
Typ
Max
Unit
Test Conditions
Source-Drain Diode Characteristics
1.8
V
Is=5.0A; VGS=0V
VSD
Diode Forward Voltage
1.4
V
IS=4.0A; VGS=0V
trf
Reverse Recovery Time
350
ns
IS=5.0A; dIS/dt=25A/µS
Notes
1. TJ=+25℃ to +150℃
2. Pulse width limited by TJ
3. Switching time measurements performed on LEM TR-58 test equipment.



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