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IRF520 Datasheet(PDF) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

No. de pieza IRF520
Descripción Electrónicos  N-Channel Power Mosfets,
PDF  5 Pages
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Fabricante Electrónico  ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]
Página de inicio  http://www.artschip.com/
Logo ARTSCHIP - ARTSCHIP ELECTRONICS CO.,LMITED.

IRF520 Datasheet(HTML) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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IRF120-123/IRF520-523
MTP10N08/10N10
N-Channel Power Mosfets,
11A,60-100V
www.artschip.com
2
Maximum Rating
Symbol
Characteristic
Rating
IRF120/122
IRF520/522
MTP10N10
Rating
MTP10N08
Rating
IRF122/123
IRF522/523
Unit
VDSS
Drain to Source Voltage
1
100
80
60
V
VDGR
Drain to Gate Voltage
1
RGS=20kΩ
100
80
60
V
VGS
Gate to Source Voltage
±20
±20
±20
V
TJ,Tstg
Operating Junction and
Storage Temperature
-55 to +150
-55 to +150
-55 to +150
℃
TL
Maximum Lead Temperature
for Soldering Purposes,
1/8” From Case for 5s
275
275
275
℃
Maximum Thermal Characteristics
IRF120-123/IRF520-523
MTP10N08/10
RӨJC
Thermal Reistance
Junction to Case
3.12
1.67
℃
/W
RӨJA
Thermal Resistance,
Junction to Ambient
30/80
80
℃
/W
PD
Total Power Dissipation
at Tc=25℃
40
75
W
IDM
Pulsed Drain Current
2
20
32
A
Electrical Characteristics
(Tc=25℃ unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
Test Conditionss
Off Characteristics
100
80
V(BR)DSS
Drain Source Breakdown Voltage1
IRF120/122/520/522/
MTP10N10
MTP10N08
IRF121/123/521/523
60
V
VGS=0V, ID=250µA
250
µA
VDS=Rated VDSS,VGS=0V
IDSS
Zero Gate Voltage Drain Current
1000
µA
VDS=0.8x Rated VDSS,
VGS=0V, Tc=125℃
IGSS
Gate-Body Leakage Current
IRF120-123
IRF520-523/MTP10N08/10
±100
±500
nA
VGS=±20V,VDS=0V



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