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MNDS26F32MW/883 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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MNDS26F32MW/883 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 12 page ![]() MICROCIRCUIT DATA SHEET MNDS26F32M-X-RH REV 0C0 (Absolute Maximum Ratings) (Note 1) Storage Temperature Range -65 C < Ta < +150 C Operating Temperature Range -55 C < Ta < +125 C Lead Temperature 300 C Soldering, 60 seconds Supply Voltage 7.0V Common Mode Voltage Range +25V Differential Input Voltage +25V Enable Voltage 7.0V Output Sink Current 50mA Maximum Power Dissipation (Pd) @ +25C (Note 2) 500mW Thermal Resistance (JA) 100 C/W J package 142 C/W W package 87 C/W E package Note 1: "Absolute Maximum Ratings" are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The tables of "Electrical Characteristics" provide conditions for actual device operation. Note 2: Derate J package 10.0mW/C above +25C, Derate W package 7.1mW/C above +25C, Derate E package 11.5mW/C above +25C Recommended Operating Conditions Operating Temperature -55 C < Ta < +125 C Supply Voltage 4.5V to 5.5V 3 |
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