EMFA0P02JS datasheet(3/5 Pages) EXCELLIANCE

No. de pieza	EMFA0P02JS

Descripción Electrónicos	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	EXCELLIANCE [Excelliance MOS Corp.]

Página de inicio	http://www.excelliancemos.com/

Logo

3 / 5 page

2015/7/15

p.3

EMFA0P02JS

Normalized on‐Resistance v.s. Junction Temperature

T ‐ Junction Temperature ( °C )

1.2

0.6

‐50

0.8

1.0

‐25

I = ‐3A

V = ‐4.5V

1.4

1.6

1.8

150

100

125

Body Diode Forward Voltage Variation

with Source Current and Temperature

T = 125°C

‐V ‐ Body Diode Forward Voltage( V )

0.6

0.0001

0.001

0.01

0.2

0.4

25°C

V = 0V

0.1

0.8

1.0

‐55°C

1.2

‐V ‐ Drain‐Source Voltage( V )

‐3.0V

‐2.5V

‐4.0V

‐3.5V

V = ‐4.5 V

Typical output characteristics

‐ V , Drain‐Source Voltage( V )

Capacitance Characteristics

300

100

200

Crss

Coss

400

500

600

Ciss

f =1MHz

VGS=0 V

V = ‐ 5V

Q ‐ Gate Charge( nC )

I = ‐ 3A

‐ 10V

Gate Charge Characteristics

T = 25°C

‐ V ‐ Gate‐Source Voltage( V )

2.5

0.10

0.00

0.05

0.15

0.5

1.0

1.5

2.0

0.20

0.25

0.30

T = 125°C

3.5

3.0

4.0

4.5

5.0

I = ‐ 3A

On‐Resistance Variation with Gate‐Source Voltage

TYPICAL CHARACTERISTICS

EMFA0P02JS Datasheet(PDF) 3 Page - Excelliance MOS Corp.

EMFA0P02JS Datasheet(HTML) 3 Page - Excelliance MOS Corp.

Html Pages

1 2 3 4 5

Datasheet Descarga

Enlace URL