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HN58V65API-10 Datasheet(PDF) 8 Page - Renesas Technology Corp

No. de pieza HN58V65API-10
Descripción Electrónicos  64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version
PDF  28 Pages
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HN58V65API-10 Datasheet(HTML) 8 Page - Renesas Technology Corp

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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
Rev.3.00, Feb.02.2004, page 8 of 26
Write Cycle 1 (2.7
≤ V
CC
< 4.5 V)
Parameter
Symbol
Min*
3
Typ
Max
Unit
Test conditions
Address setup time
tAS
0
ns
Address hold time
tAH
50
ns
CE to write setup time (WE controlled)
tCS
0
ns
CE hold time (WE controlled)
tCH
0
ns
WE to write setup time (CE controlled)
tWS
0
ns
WE hold time (CE controlled)
tWH
0
ns
OE to write setup time
tOES
0
ns
OE hold time
tOEH
0
ns
Data setup time
tDS
50
ns
Data hold time
tDH
0
ns
WE pulse width (WE controlled)
tWP
200
ns
CE pulse width (CE controlled)
tCW
200
ns
Data latch time
tDL
100
ns
Byte load cycle
tBLC
0.3
30
µs
Byte load window
tBL
100
µs
Write cycle time
tWC
10*
4
ms
Time to device busy
tDB
120
ns
Write start time
tDW
0*
5
ns
Reset protect time*
2
tRP
100
µs
Reset high time*
2, 6
tRES
1
µs
Notes: 1. tDF and tDFR are defined as the time at which the outputs achieve the open circuit conditions and
are no longer driven.
2. This function is supported by only the HN58V66A series.
3. Use this device in longer cycle than this value.
4. tWC must be longer than this value unless polling techniques or RDY/Busy are used. This device
automatically completes the internal write operation within this value.
5. Next read or write operation can be initiated after tDW if polling techniques or RDY/Busy are used.
6. This parameter is sampled and not 100% tested.
7. A6 through A12 are page addresses and these addresses are latched at the first falling edge of
WE.
8. A6 through A12 are page addresses and these addresses are latched at the first falling edge of
CE.
9. See AC read characteristics.



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