BU508A_19 datasheet(1/2 Pages) ISC

No. de pieza	BU508A

Descripción Electrónicos	Silicon NPN Power Transistor

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Silicon NPN Power Transistor

BU508A

DESCRIPTION

·

Collector-Emitter Sustaining Voltage-

: VCEX= 1500V(Min)

·

High Power Dissipation-

: PD= 125W@TC= 25℃

·

Minimum Lot-to-Lot variations for robust device performance

and reliable operation

APPLICATIONS

·

Designed for use in large screen color deflection circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector- Emitter Voltage(VBE= 0)

1500

V

VCEO

Collector-Emitter Voltage

700

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

15

A

IB

Base Current- Continuous

4

A

IBM

Base Current-Peak

6

A

PC

Collector Power Dissipation

@TC=25℃

125

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.0

℃

/W

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BU508A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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