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PIC12F635E/P Datasheet(PDF) 165 Page - Microchip Technology

No. de pieza PIC12F635E/P
Descripción Electrónicos  8/14-PIN FLASH-BASED, 8-BIT CMOS MICROCONTROLLERS WITH NANOWATT TECHNOLOGY
PDF  196 Pages
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Fabricante Electrónico  MICROCHIP [Microchip Technology]
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PIC12F635E/P Datasheet(HTML) 165 Page - Microchip Technology

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© 2005 Microchip Technology Inc.
Preliminary
DS41232B-page 163
PIC12F635/PIC16F636/639
TABLE 15-2:
PRECISION INTERNAL OSCILLATOR PARAMETERS
FIGURE 15-5:
CLKOUT AND I/O TIMING
Param
No.
Sym
Characteristic
Freq
Tolerance
Min
Typ†
Max
Units
Conditions
F10
FOSC
Internal Calibrated
INTOSC Frequency(1)
HFINTOSC
±1%
—
8.00
TBD
MHz VDD and Temperature (TBD)
±2%
—
8.00
TBD
MHz 2.5V
≤ VDD ≤ 5.5V
0
°C ≤ TA ≤ +85°C
±5%
—
8.00
TBD
MHz 2.0V
≤ VDD ≤ 5.5V
-40
°C ≤ TA ≤ +85°C (Ind.)
-40
°C ≤ TA ≤ +125°C (Ext.)
F14
TIOSCST Oscillator Wake-up from
Sleep Start-up Time*
——
TBD
TBD
μsVDD = 2.0V, -40°C to +85°C
——
TBD
TBD
μsVDD = 3.0V, -40°C to +85°C
——
TBD
TBD
μsVDD = 5.0V, -40°C to +85°C
Legend: TBD = To Be Determined
*
These parameters are characterized but not tested.
† Data in ‘Typ’ column is at 5.0V, 25
°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1:
To ensure these oscillator frequency tolerances, VDD and VSS must be capacitively decoupled as close to
the device as possible. 0.1
μF and 0.01 μF values in parallel are recommended.
OSC1
CLKOUT
I/O pin
(Input)
I/O pin
(Output)
Q4
Q1
Q2
Q3
10
13
14
17
20, 21
22
23
19
18
15
11
12
16
Old Value
New Value



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