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EMB02N60CSB Datasheet(PDF) 4 Page - Excelliance MOS Corp. |
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EMB02N60CSB Datasheet(HTML) 4 Page - Excelliance MOS Corp. |
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4 / 5 page ![]() 2015/3/27 p.4 EMB02N60CSB Body Diode Forward Voltage Variation with Source Current and Temperature 25°C T = 125°C V ‐ Body Diode Forward Voltage( V ) 0.001 0 0.01 0.1 0.4 SD 0.2 0.6 V = 0V 1 10 100 A GS 1.0 0.8 1.2 ‐55°C 1.4 50 All o w a b l e Pow e r Di s s i p a t io n 0 10 20 c 0 25 40 30 50 60 150 100 75 125 T ,C a s e Te m p e r at u r e ( °C ) 50 Gate Threshold Voltage v.s. Temperature 0 ‐50 1.0 2.0 j ‐25 0 25 4.0 3.0 5.0 6.0 150 100 75 125 T ,Junction Temperature(°C ) V ,Drain‐Source Voltage( V ) Typical Output Characteristics 2 10 0 0 1 30 DS 20 40 10V 4 3 5 Vgs=20V 7.5V 50 60 7V 8V 1 V ,Gate‐Source Voltage( V ) 0 2 1 3 GS DS V = 10V 2 4 5 3 4 5 6 A Transfer Characteristics T = ‐55 °C 25 °C 125 °C 50 0.6 ‐50 0.8 1.0 j ‐25 0 25 1.4 1.2 1.6 1.8 150 100 75 125 T ,Junction Temperature(°C ) TYPICAL CHARACTERISTICS |
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