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BC548 Datasheet(PDF) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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BC548 Datasheet(HTML) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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1 / 3 page  BC546/547/548/549/550 NPN Epitaxial Silicon Transistor www.artschip.com 1 Switching and Applications High voltage: BC546, VCEO=65V Low Noise:BC549,BC550 Complement to BC556…BC560 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 ℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage :BC546 :BC547/550 :BC548/549 80 50 30 V V V VCEO Collector-Emitter Voltage: BC546 :BC547/550 :BC548/549 65 45 30 V V V VEBO Emitter-Base Voltage :BC546/547 :BC548/549/550 :BC548/549 65 45 30 V V V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ TSTG Storage Temperature -65~150 ℃ Electrical Characterististics Ta=25 ℃ unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA hFE DC Current Gain VCE=5V, IC=2mA 110 800 VCE(sat) Collector-Emitter Saturation Voltage Ic=10mA, IB=0.5mA IC=100mA, IB=5mA 90 200 250 600 mV mV VBE(sat) Base-Emitter Saturation Voltage Ic=10mA, IB=0.5mA IC=100mA, IB=5mA 700 900 mV mV VBE(on) Base-Emitter On Voltage VCE=5V, Ic=2mA VCE=5V, IC=10mA 580 660 700 720 mV mV fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 MHz Cob Output Capacitance VCB=0.5V, IC=0, f=1MHz 3.5 6 pF Cib Input Capacitance VEB=0.5V, Ic=0,f=1MHz 9 pF NF Noise Figure : BC546/547/548 :BC549/550 :BC549 :BC550 VCE=5V, Ic=200µA f=1KHz,RG=2k Ω VCE=5V, IC=200µA RG=2k Ω, f=30~15000MHz 2 1.2 1.4 1.4 10 4 4 3 dB dB dB dB hFE Classification Classification A B C hFE 110~220 200~450 420~800 |
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