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ACST4-7SB Datasheet(PDF) 2 Page - STMicroelectronics

No. de pieza ACST4-7SB
Descripción Electrónicos  AC POWER SWITCH
PDF  9 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ACST4-7SB Datasheet(HTML) 2 Page - STMicroelectronics

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ACST4 Series
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Symbol
Parameter
Value
Unit
VDRM /VRRM
Repetitive peak off-state voltage
Tj = -10 °C
700
V
IT(RMS)
RMS on-state current full cycle sine
wave 50 to 60 Hz
DPAK
Tc = 110 °C
4
A
TO-220FPAB
Tc = 100 °C
ITSM
Non repetitive surge peak on-state current
Tj initial = 25°C, full cycle sine wave
F =50 Hz
30
A
F =60 Hz
33
A
I
2t
Fusing capability
tp = 10ms
6.4
A²s
dI/dt
Repetitive on-state current critical rate
of rise IG = 10mA (tr < 100ns)
Tj = 125°C
F = 120 Hz
50
A/
µs
VPP
Non repetitive line peak pulse voltage
note 1
2kV
Tstg
Storage temperature range
- 40 to + 150
°C
Tj
Operating junction temperature range
- 30 to + 125
°C
Tl
Maximum lead soldering temperature during 10s
260
°C
Note 1: according to test described by IEC61000-4-5 standard & Figure B.
ABSOLUTE RATINGS (limiting values)
For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage
Symbol
Parameter
Value
Unit
PG (AV)
Average gate power dissipation
0.1
W
PGM
Peak gate power dissipation (tp = 20µs)
10
A
IGM
Peak gate current (tp = 20µs)
1
V
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
S = 0.5cm²
DPAK
70
°C/W
TO-220FPAB
60
°C/W
Rth (j-l)
Junction to case for full cycle sine wave
conduction
DPAK
2.6
°C/W
TO-220FPAB
4.6
°C/W
S = Copper surface under Tab
THERMAL RESISTANCES



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