VTO175 datasheet(2/2 Pages) IXYS

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10-3

10-2

10-1

100

101

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

10-3

10-2

10-1

100

101

100

200

300

400

500

600

700

800

900

FSM

K/W

thJC

50 Hz

80% V

RRM

VJ = 45°C

VJ = 125°C

M6x10

E ~

A+

B-

2.8 x 0.8

Dimensions in mm (1 mm = 0.0394")

Symbol

Test Conditions

Characteristic Values

VTO 110

VTO 175

R, ID

R = VRRM; VD = VDRM

VJ = TVJM

5mA

VJ = 25°C

0.3

F, VT

F, IT = 200 A, TVJ = 25°C

£ 1.75

1.57

For power-loss calculations only

0.85

VJ = 125°C)

3.5

D = 6 V;

VJ = 25°C

1.5

VJ = -40°C

1.6

D = 6 V;

VJ = 25°C

100

VJ = -40°C

200

VJ = TVJM;VD = 2/3 VDRM

0.2

VJ = TVJM;VD = 2/3 VDRM

5mA

G = 0.3 A; tG = 30 msTVJ = 25°C

450

G/dt = 0.3 A/ms

VJ = 25°C; VD = 6 V; RGK = ¥£

200

VJ = 25°C; VD = 1/2 VDRM

G = 0.3 A; diG/dt = 0.3 A/ms

thJC

per thyristor (diode); DC current

0.65

0.46

K/W

per module

0.108

0.077

K/W

thJH

per thyristor (diode); DC current

0.8

0.55

K/W

per module

0.133

0.092

K/W

Creeping distance on surface

Creepage distance in air

9.4

Max. allowable acceleration

m/s2

VTO 110

VTO 175

Fig. 1 Gate trigger characteristics

Fig. 2

DC output current at case

temperature

Fig. 3 Surge overload current

FSM: Crest value, t: duration

Fig. 4 Transient thermal impedance

junction to case (per leg)

VTO 110

100

1000

0.1

1: I

GT, TVJ = 125°C

2: IGT, TVJ = 25°C

3: IGT, TVJ = -40°C

4: P

GAV = 0.5 W

5: PGM = 5 W

6: PGM = 10 W

GD, TVJ = 125°C

100

150

100

120

dAV

°C

VTO 110

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