BCR8CS datasheet(1/5 Pages) MITSUBISHI

No. de pieza	BCR8CS

Descripción Electrónicos	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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Fabricante Electrónico	MITSUBISHI [Mitsubishi Electric Semiconductor]

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Feb.1999

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR8CS

MEDIUM POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR8CS

APPLICATION

Solid state relay, hybrid IC

•IT (RMS) ........................................................................ 8A

•VDRM ..............................................................400V/600V

•IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) V5

Symbol

VDRM

VDSM

Parameter

Repetitive peak off-state voltage

V1

Non-repetitive peak off-state voltage V1

Voltage class

Unit

V

MAXIMUM RATINGS

8

400

500

12

600

720

Symbol

IT (RMS)

ITSM

I2t

PGM

PG (AV)

VGM

IGM

Tj

Tstg

—

Parameter

RMS on-state current

Surge on-state current

I2t for fusing

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

Peak gate current

Junction temperature

Storage temperature

Weight

Conditions

Commercial frequency, sine full wave 360

° conduction, Tc=105°C

60Hz sinewave 1 full cycle, peak value, non-repetitive

Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current

Typical value

Unit

A

A2s

W

V

A

°C

g

Ratings

8

80

26

5

0.5

10

2

–40 ~ +125

1.2

V1. Gate open.

23

1

4

TYPE

NAME

VOLTAGE

CLASS

10.5 MAX

5

1

0.8

4.5

1.3

0.5

0

+0.3

–0

∗

OUTLINE DRAWING

Dimensions

in mm

TO-220S

24

1

3

1

2

3

4

T1 TERMINAL

T2 TERMINAL

GATE TERMINAL

T2 TERMINAL

∗ Measurement

point of case

temperature

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