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2SA1649 Datasheet(PDF) 2 Page - NEC |
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2SA1649 Datasheet(HTML) 2 Page - NEC |
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2 / 6 page  Data Sheet D15588EJ2V0DS 2 2SA1649, 2SA1649-Z ELECTRICAL CHARACTERISTICS (Ta = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector to emitter voltage VCEO(SUS) IC = −4.0 A, IB = −0.4 A, L = 1 mH −30 V Collector to emitter voltage VCEX(SUS) IC = −4.0 A, IB2 = −IB1 = −0.4 A, VBE(OFF) = 1.5 V, L = 180 µH, clamped −40 V Collector cutoff current ICBO VCE = −30 V, IE = 0 −10 µA Collector cutoff current ICER VCE = −30 V, RBE = 50 Ω, Ta = 125°C −1.0 mA Collector cutoff current ICEX1 VCE = −30 V, VBE(OFF) = 1.5 V −10 µA Collector cutoff current ICEX2 VCE = −30 V, VBE(OFF) = 1.5 V, Ta = 125 °C −1.0 mA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −10 µA DC current gain hFE1* VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE2* VCE = −2.0 V, IC = −2.0 A 100 200 400 − DC current gain hFE3* VCE = −2.0 V, IC = −4.0 A 60 − Collector saturation voltage VCE(sat)1* IC = −3.0 A, IB = −0.2 A −0.3 V Collector saturation voltage VCE(sat)2* IC = −4.0 A, IB = −0.3 A −0.5 V Base saturation voltage VBE(sat)1* IC = −3.0 A, IB = −0.2 A −1.2 V Base saturation voltage VBE(sat)2* IC = −4.0 A, IB = −0.3 A −1.5 V Collector capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 250 pF Gain bandwidth product fT VCE = −10 V, IC = −0.5 A 120 MHz Turn-on time ton 0.3 µs Storage time tstg 1.5 µs Fall time tf IC = −4.0 A, RL = 5 Ω, IB1 = −IB2 = −0.15 A, VCC ≅ −20 V Refer to the test circuit. 0.3 µs * Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/pulsed h)( CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 SWITCHING TIME (tRQ, tVWJ, tI) TEST CIRCUIT %DVH FXUUHQW ZDYHIRUP &ROOHFWRU FXUUHQW ZDYHIRUP |
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