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2SC2501 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC2501 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistors 2SC2501 DESCRIPTION · With TO-220 packaging · Reliable performance at higher powers · Accurate reproduction of Input signal · Greater dynamic range · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching regulators · High frequency inverters · General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A PT Total Power Dissipation 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.12 ℃ /W |
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