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ES3JB Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No. de pieza ES3JB
Descripción Electrónicos  3A, 50V - 600V Surface Mount Super Fast Rectifier
PDF  8 Pages
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Fabricante Electrónico  TSC [Taiwan Semiconductor Company, Ltd]
Página de inicio  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

ES3JB Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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ES3AB - ES3JB
Taiwan Semiconductor
2
Version:B1706
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-lead thermal resistance
RӨJL
24
°C/W
Junction-to-ambient thermal resistance
RӨJA
84
°C/W
Junction-to-case thermal resistance
RӨJC
26
°C/W
Thermal Performance Note: Units mounted on recommended PCB (10mm x 10mm Cu pad test board)
ELECTRICAL SPECIFICATIONS (T
A = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
Forward voltage per diode
(1)
ES3AB
ES3BB
ES3CB
ES3DB
IF = 1.5A,TJ = 25°C
VF
0.80
0.92
V
ES3FB
ES3GB
0.90
1.04
V
ES3HB
ES3JB
1.11
1.30
V
ES3AB
ES3BB
ES3CB
ES3DB
IF = 3.0A,TJ = 25°C
VF
0.86
1.00
V
ES3FB
ES3GB
0.98
1.13
V
ES3HB
ES3JB
1.24
1.45
V
ES3AB
ES3BB
ES3CB
ES3DB
IF = 1.5A,TJ = 125°C
VF
0.66
0.75
V
ES3FB
ES3GB
0.73
0.85
V
ES3HB
ES3JB
0.85
0.98
V
ES3AB
ES3BB
ES3CB
ES3DB
IF = 3.0A,TJ = 125°C
VF
0.73
0.84
V
ES3FB
ES3GB
0.83
0.95
V
ES3HB
ES3JB
0.99
1.13
V
Reverse current @ rated VR per diode
(2)
TJ = 25°C
IR
-
10
µA
TJ = 125°C
-
100
µA
Junction capacitance
ES3AB
ES3BB
ES3CB
ES3DB
1 MHz, VR=4.0V
CJ
46
-
pF
ES3FB
ES3GB
41
-
pF
ES3HB
ES3JB
34
-
pF
Reverse recovery time
IF=0.5A ,IR=1.0A
IRR=0.25A
trr
-
35
ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms



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