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BUP51 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BUP51
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUP51 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
BUP51
DESCRIPTION
·
With TO-3 packaging
·
Large collector current
·
Low collector saturation voltage
·
High power dissipation
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in DC-DC converter
·
Driver of solenoid or motor
·
For audio amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.72
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
175
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
80
A
ICM
Peak Collector Current
100
A
PC
Collector Power Dissipation
300
W
TJ
Junction Temperature
-55~200
℃
Tstg
Storage Temperature
-55~200
℃


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