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BU508A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU508A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc Product Specification 2 isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU508A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 1.3 V ICES Collector Cutoff Current VCE= 1500V ; VBE= 0 VCE=1500V;VBE=0;TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 5.0V ; IC= 0 0.1 mA hFE DC Current Gain IC= 0.1A ; VCE= 5V 6 30 COB Output Capacitance IE=0;VCB= 10V; ftest= 0.1MHz 125 pF fT Current-Gain—Bandwidth Product IC=0.1A;VCE=5V;ftest=1.0MHz 7 MHz Pulsed: Pulse duration ≤300 us, duty cycle ≤1.5 % |
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