IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXGI48N60C3 IXGA48N60C3

IXGP48N60C3 IXGH48N60C3

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

20

30

S

C

ies

1960

pF

C

oes

V

207

pF

C

res

66

pF

Q

g

77

nC

Q

ge

I

16

nC

Q

gc

32

nC

t

d(on)

19

ns

t

ri

26

ns

E

on

0.41

mJ

t

d(off)

60

100

ns

t

fi

38

ns

E

off

0.23

0.42

mJ

t

d(on)

19

ns

t

ri

26

ns

E

on

0.65

mJ

t

d(off)

92

ns

t

fi

95

ns

E

off

0.57

mJ

R

thJC

0.42 °C/W

R

thCS

(TO-247)

0.21

°C/W

(TO-220)

0.50

°C/W

Inductive Load, T

I

V

Note 2

Inductive Load, T

I

V

Note 2

Notes:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

TO-263 Lead (IXGI)

G = Gate

D

= Collector

S = Emitter

Tab = Collector

TO-247 (IXGH)

G

E

C

C (Tab)

TO-263 AA (IXGA)

G

E

G

C E

TO-220AB (IXGP)

C (Tab)

C (Tab)

C

E

G

C (Tab)