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CS1089XFN44 Datasheet(PDF) 3 Page - ON Semiconductor

No. de pieza CS1089XFN44
Descripción Electrónicos  Vacuum Fluorescent Display Tube Driver
PDF  12 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
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CS1089XFN44 Datasheet(HTML) 3 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (continued) (8.0 V
≤ VBB ≤ 16.5 V, Gnd = 0 V, –40°C ≤ TJ ≤ 105°C; unless otherwise stated.
Note 4.)
Parameter
Test Conditions
Min
Typ
Max
Unit
AN1 – AN23 Outputs
IOL
Sink Current
100
–
–
µA
IOH
Source Current
2.0
–
–
mA
VOL
IOUT = 100 µA
–
–
0.5
V
VOG
IOUT = –2.0 mA
VBB – 0.5
–
VBB
V
DOUT Output
IOL
Sink Current
1.0
–
–
mA
IOH
Source Current
1.0
–
–
mA
VOL
IOUT = 1.0 mA
–
–
0.5
V
VOH
IOUT = –1.0 mA
3.9
–
5.1
V
AC Characteristics: Input and Output Timing
FC, CLK Frequency
–
0
–
1.0
MHz
TCL, CLK Low Time
–
200
–
–
ns
TCH, CLK High Time
–
200
–
–
ns
TCR, CLK Rise Time
–
–
–
100
ns
TCF, CLK Fall Time
–
–
–
100
ns
TCD, CLK Low to DOUT
Propagation Delay
–
–
–
200
ns
TSC, STB Low to CLK High Time
–
50
–
–
ns
TST, STB High Time
–
500
–
–
ns
TAN, STB High to Anode Output
Propagation Delay
–
–
–
5.0
µs
TGL, Grid Turn On Propagation Delay
VBB = 12 V
–
–
2.0
µs
TG0, Grid Turn Off Propagation Delay
VBB = 12 V
–
–
5.0
µs
TGR, Grid Rise Time
At rated load. Note 5.
0.50
–
2.00
µs
TGF, Grid Fall Time
At rated load. Note 5.
0.35
–
2.00
µs
TAR, Anode Rise Time
At rated load. Note 5.
0.40
–
2.00
µs
TAF, Anode Fall Time
At rated load. Note 5.
0.40
–
2.50
µs
4. Designed to meet these characteristics over the stated voltage and temperature ranges, though may not be 100% parametrically tested
in production.
5. Grid and anode rise / fall times are measured from 10% and 90% points. Output currents are at the maximum rated currents for the
respective stages.



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