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CS22-12IO1M Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza CS22-12IO1M
Descripción Electrónicos  isc Thyristors
PDF  1 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

CS22-12IO1M Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  CS22-12IO1M Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
CS22-12IO1M
DESCRIPTION
·
With TO-220F packaging
·
Long-term stability
·
Thyristor for line frequency
·
Planar passivated chip
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Switching applications
·
AC power controller
·
Motor control
·
Power converter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
1200
V
VRRM
Repetitive peak reverse voltage
1200
V
IT(AV)
Average forward current
Tc=85℃
16
A
ITSM
Surge non-repetitive on-state current
50HZ
( 1/2 cycle,sine wave;Tc=45℃ )
60HZ
300
340
A
PG(AV)
Average gate power dissipation
0.5
W
Tj
Operating junction temperature
-40~125
℃
Tstg
Storage temperature
-40~150
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak reverse current
VRM=VRRM
VDM=VDRM
Tj=25℃
5
mA
IDRM
Repetitive peak off-state current
VTM
On-state voltage
ITM= 30A
1.5
V
IGT
Gate-trigger current
VD = 6V
30
mA
VGT
Gate-trigger voltage
VD = 6V
1.5
V
Rth(j-c)
Thermal resistance
Junction to case
2.5
℃
/W


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