HTNFET

900214 Rev. D

6-04

Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability

arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS (1, 2)

(1) Stresses in excess of those listed above may result in permanent damage.

These are stress ratings only, and operation at these levels is not implied.

Frequent or extended exposure to absolute maximum conditions may

affect device reliability.

(2) ESD sensitivity is determined by the gate capacitance; additional ESD

protection would decrease performance.

(3) Derate power at 1W/C to Tj = 300

°C.

-55 to +225

°C, unless otherwise specified

(1) Typical operating conditions: VDS = 10 V, TA=25

°C.

(2) Worst case operating conditions: VDS = 50 V, TA = -55 to 225

°C.

l

o

b

m

y

Ss

r

e

t

e

m

a

r

a

Ps

n

o

i

t

i

d

n

o

Ce

u

l

a

Vs

t

i

n

U

t

n

e

r

r

u

C

n

i

a

r

D

s

u

o

u

n

i

t

n

o

CC

°

5

2

=

j

T

@D

B

TA

t

n

e

r

r

u

C

n

i

a

r

D

s

u

o

u

n

i

t

n

o

CC

°

0

0

2

=

j

T

@D

B

TA

G

e

g

a

t

l

o

V

e

c

r

u

o

S

-

o

T

-

e

t

a

G0

1V

t

d

/

v

dy

r

e

v

o

c

e

R

e

d

o

i

D

k

a

e

PD

B

Ts

n

/

V

n

o

i

t

c

n

u

J

g

n

i

t

a

r

e

p

O0

0

3

+

o

t

5

5

-C

°

g

t

s

Te

g

n

a

R

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S0

0

3

+

o

t

5

5

-C

°

d

Pr

e

w

o

P

g

n

i

t

a

r

e

p

OC

°

0

5

2

=

j

T

@0

5)

3

(

W

IDSS vs TEMPERATURE

1.00E-11

1.00E-10

1.00E-09

1.00E-08

1.00E-07

1.00E-06

1.00E-05

1.00E-04

0

50

100

150

200

250

Temperature (C)

VDS = 90 V

VDS = 50 V

VDS = 10 V

l

o

b

m

y

Ss

r

e

t

e

m

a

r

a

Ps

n

o

i

t

i

d

n

o

C

t

s

e

Tp

y

T

)

1

(

e

s

a

C

t

s

r

o

W

)

2

(

s

t

i

n

U

n

i

Mx

a

M

S

S

D

)

R

B

(

Ve

g

a

t

l

o

v

n

w

o

d

k

a

e

r

b

e

c

r

u

o

s

-

n

i

a

r

D

C

D

A

µ

0

0

1

=

D

I

,

0

=

S

G

V

5

5V

)

n

o

(

S

D

R

e

t

a

t

s

-

n

o

e

c

r

u

o

s

-

o

t

-

n

i

a

r

d

c

i

t

a

t

S

C

°

5

2

=

a

T

@

e

c

n

a

t

s

i

s

e

r

A

1

.

0

=

D

I

,

C

D

V

5

+

=

S

G

V4

.

0

Ω

)

h

t

(

S

G

V

@

e

g

a

t

l

o

v

d

l

o

h

s

e

r

h

t

e

t

a

G

C

°

5

2

=

a

T

A

µ

0

0

1

=

D

I

,

S

D

V

=

S

G

V6

.

14

.

2V

S

S

G

I

e

g

a

k

a

e

l

d

r

a

w

r

o

f

e

c

r

u

o

s

-

o

t

-

e

t

a

GC

D

V

5

+

=

S

G

V0

0

1A

n

e

g

a

k

a

e

l

e

s

r

e

v

e

r

e

c

r

u

o

s

-

o

t

-

e

t

a

GC

D

V

5

-

=

S

G

V0

0

1

-A

n

n

g

i

s

e

d

y

b

d

e

e

t

n

a

r

a

u

G

g

Q)

D

G

C

+

S

G

C

(

e

g

r

a

h

c

e

t

a

g

l

a

t

o

T

p

e

e

w

s

,

S

G

V

(

V

5

+

=

S

G

V

;

V

0

5

+

=

D

D

V

;

%

0

1

=

d

;

)

V

0

1

+

o

t

0

=

=

τ

s

m

1

3

.

4C

n

)

n

o

(

d

te

m

i

t

y

a

l

e

d

n

o

-

n

r

u

T

;

V

0

5

+

=

D

D

V

;

V

0

1

+

o

t

0

=

p

e

e

w

s

,

S

G

V

;

%

1

.

0

=

d

=

τ

;

s

m

1

5

1

=

D

R

Ω

0

3

=

G

R

,

Ω

0

1s

n

r

te

m

i

t

e

s

i

R

0

2s

n

)

f

f

o

(

d

te

m

i

t

y

a

l

e

d

f

f

o

-

n

r

u

T

4

6s

n

f

te

m

i

t

ll

a

F

0

2s

n

s

s

i

Ce

c

n

a

t

i

c

a

p

a

c

t

u

p

n

I

V

8

2

+

=

S

D

V

,

0

=

S

G

V

)

n

o

i

t

a

ll

i

c

s

o

V

1

.

0

(

z

H

M

0

.

1

=

f

0

9

2F

p

s

s

o

Ce

c

n

a

t

i

c

a

p

a

c

t

u

p

t

u

O

7

8F

p

s

s

r

Ce

c

n

a

t

i

c

a

p

a

c

r

e

f

s

n

a

r

t

e

s

r

e

v

e

R

4

1F

p