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TIP31 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza TIP31
Descripción Electrónicos  isc Silicon NPN Power Transistors
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

TIP31 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
TIP31
DESCRIPTION
·
Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.2V(Max.)@IC= 3A
·
Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 40V(Min)
·
Complement to Type TIP32
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
5
A
IB
Base Current
1
A
PC
Collector Power Dissipation
TC=25℃
25
W
Tj
Junction Temperature
150
℃
Tstg
Storage Ttemperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
5
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5
℃
/W


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